• Dimensional measurement for 500nm design rule
• Measure 8700 data points in under 60 seconds, 2-D control map
• Measurements - Thickness: Center point, five point, full wafer scan
• Shape: Bow and Warp using 3-point or Best-Fit references
• Global Flatness: SEMI GBI, TIR, FPD, FPD percent, 5-Point TTV
• Site Flatness: All SEMI M1 standards with 8-30 mm site size and variable offsets

• Thickness - Accuracy: +/-0.50 micro-meters
• Repeatability: 0.15 micro-meters
• Absolute Range: Nominal +/-125 micro-meters

• Global Flatness - Accuracy: +/-0.15 micro-meters
• Repeatability: 0.05 micro-meters

• Site Flatness - Accuracy: +/-0.15 micro-meters
• Repeatability: 0.05 micro-meters

• Shape (Bow/Warp) - Accuracy: +/-(4.0 + 5 percent of reading) micro-meters
• Repeatability: (1.3 + 1 percent of reading) micro-meters
• Absolute Range: +/-150 micro-meters
• Wafer diameters supported: 100,125,and 200mm (polished or patterned)

• Wafer Thickness: 400 to 1,000 micro-meters